Complementary metal-oxide semiconductor sensor. A type of imaging sensor in which the charge-to-voltage conversion is done at each individual pixel and the signal is read out by a multiplexing to an A/D converter. Can yield a less uniform output and very low power dissipation compared to CCD, but at much higher speeds due to lack of shift registers.
See also Binning , Charge-Coupled Device (CCD) , Pixel
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